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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides (http://mot-sps.com/rf/sg/sg.html) for scheduled introduction dates. Order this document by MRF373/D The RF MOSFET Line RF Power Field Effect Transistors MRF373 MRF373S 60 W, 470 - 860 MHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETS N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 - 860 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 28 volt transmitter equipment. * Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture Output Power - 60 Watts Power Gain - 13 dB Efficiency - 50% * Typical Performance at 860 MHz, 28 Volts, Broadband Push-Pull Fixture Output Power - 100 Watts (PEP) D Power Gain - 11.2 dB Efficiency - 40% IMD - -30 dBc * Excellent Thermal Stability * 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW CASE 360B-03, STYLE 1 (MRF373) G CASE 360C-03, STYLE 1 (MRF373S) S MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature MRF373S Symbol VDSS VGS ID PD Tstg TJ Value 65 20 7 173 1.33 - 65 to +150 200 Unit Vdc Vdc Adc W W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case MRF373S MRF373 Symbol RJC RJC Max 0.75 1 Unit C/W C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA (c) Motorola, Inc. 2000WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA MRF373 MRF373S 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID =1 A) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate-Source Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 - - - - - - 1 1 Vdc Adc Adc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 200 A) Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 3 A) Forward Transconductance (VDS = 10 V, ID = 3 A) VGS(th) VGS(Q) VDS(on) gfs 2 3 - 2.2 3 4 0.6 2.9 4 5 0.8 - Vdc Vdc Vdc S DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss Coss Crss - - - 79 46 4 - - - pF pF pF FUNCTIONAL CHARACTERISTICS, CW Operation Common Source Power Gain (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz) Drain Efficiency (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz) Load Mismatch (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz, Load VSWR at 5:1 at All Phase Angles) Gps No Degradation in Output Power 13 50 14.7 54 - - dB % TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373S), Broadband Fixture Common Source Power Gain (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) Gps - 11.2 - dB - 40 - % IMD - - 30 - dBc MRF373 MRF373S 2 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA VDD VGG R2 C10 C15 C14 C13 R1 C4 C1 L1 RF OUTPUT C11 C12 Z7 RF INPUT Z8 Z9 Z10 Z11 C7 Z12 Z1 C8 Z2 Z3 Z4 Z5 Z6 C2 C3 C9 C6 C5 C1 C2 C3 C4, C5, C6 C7, C8 C9 C10, C13 C11 C12 C14 C15 L1 R1 R2 4.7 pF, B Case Chip Capacitor, ATC 15 pF, B Case Chip Capacitor, ATC 6.8 pF, B Case Chip Capacitor, ATC 10 pF, B Case Chip Capacitor, ATC 47 pF, B Case Chip Capacitor, ATC 0.2 pF, B Case Chip Capacitor, ATC 300 pF, B Case Chip Capacitor, ATC, Side Mounted 2) 2.2 mF, 50 V, Kemet P/N C1825C225 22 mF, 50 V, Kemet P/N T491D226K50AS 2) 1.0 mF, 50 V, Kemet P/N C1825C105 10 mF, 35 V, Kemet P/N T491D106K35AS 22 nH, Coilcraft P/N B07T 1.2 k, Vishay Dale Chip Resistor (1206) 12 k, Vishay Dale Chip Resistor (1206) Connectors N-Type (female), M/A Com P/N 3052-1648-10 PCB MRF373 Printed Circuit Board Rev 01, CuClad 250 (GX-0300-55), height 30 mils, r = 2.55 Heatsink Motorola P/N 95-11LDMOSKPS-1 LDMOS m250 3 x 5 Bedstead Insert Motorola P/N 95-11LDMOSKPS-2 Insert for LDMOS m250 3 x 5 Bedstead End Plates 2) Motorola P/N 93-3MB-9, End Plate for Type-N Connector Banana Jack and Nut 2) Johnson P/N 108-0904-001 Brass Banana Jack 2) H.H. Smith P/N SM-101 Figure 1. Single-Ended Narrowband Test Circuit Schematic (MRF373) TO GATE BIAS SUPPLY R2 C14 C15 C13 R1 C8 C2 C6 C5 C4 C1 C11 C10 L1 C3 C7 C12 TO DRAIN BIAS SUPPLY C9 MRF373 Figure 2. Single-Ended Narrowband Test Circuit Layout (Suitable for Use with MRF373) MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA MRF373 MRF373S 3 Figure 3. MRF373 Narrowband Test Fixture Photo VDD VGG R2 C20 C25 C24 C23 R1 C7 C1 L1 RF OUTPUT C21 C22 Z10 RF INPUT Z11 Z12 Z13 Z14 Z15 C5 Z16 Z1 C10 C11 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C2 C3 C4 C6 C9 C8 C1, C2 C3 C4, C11 C5, C10 C6 C7 C8 C9 C20, C23 C21 C24 C22 C25 L1 R1 R2 18 pF, B Case Chip Capacitor, ATC 12 pF, B Case Chip Capacitor, ATC 0.8 pF, B Case Chip Capacitor, ATC 68 pF, B Case Chip Capacitor, ATC 0.3 pF, B Case Chip Capacitor, ATC 15 pF, B Case Chip Capacitor, ATC 10 pF, B Case Chip Capacitor, ATC 1.8 pF, B Case Chip Capacitor, ATC 300 pF, B Case Chip Capacitor, ATC, Side Mounted 2) 2.2 mF, 100 V, Vishay P/N VJ3640Y225KXBAT 2) 1.0 mF, 50 V, Kemet P/N C1825C105 22 mF, 35 V, Kemet P/N T491D226K35AS 10 mF, 35 V, Kemet P/N T491D106K35AS 22 nH, Coilcraft P/N B07T 1.2 k, Vishay Dale Chip Resistor (1206) 12 k, Vishay Dale Chip Resistor (1206) Connectors N-Type (female), M/A Com P/N 3052-1648-10 PCB MRF373 Printed Circuit Board Rev 01, CuClad 250 (GX-0300-55), height 30 mils, r = 2.55 (new PCB's available from CMR) Heatsink Motorola P/N 95-11LDMOSKPS-1 LDMOS m250 3 x 5 Bedstead Insert Motorola P/N 95-11LDMOSKPS-2S Insert for LDMOS m250S 3 x 5 Bedstead End Plates 2) Motorola P/N 93-3MB-9, End Plate for Type-N Connector Banana Jack and Nut 2) Johnson P/N 108-0904-001 Brass Banana Jack 2) H.H. Smith P/N SM-101 Figure 4. Single-Ended Narrowband Test Circuit Schematic (MRF373S) MRF373 MRF373S 4 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA TO GATE BIAS SUPPLY R2 C24 C25 C23 R1 C10 C7 C1 C9 C8 C2 C21 C20 L1 C3 C4 C5 C22 TO DRAIN BIAS SUPPLY C11 C6 MRF373S Figure 5. Single-Ended Narrowband Test Circuit Layout (Suitable for Use with MRF373S) Figure 6. MRF373S Narrowband Test Circuit Photo MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA MRF373 MRF373S 5 TYPICAL CHARACTERISTICS FOR MRF373 IN SINGLE-ENDED FIXTURE 18 G p, POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) VDD = 28 V f = 860 MHz 17 G p, POWER GAIN (dB) IDQ = 500 mA 400 mA 300 mA 200 mA 100 mA 22 20 18 16 14 12 10 8 13 30 40 35 45 Pout, OUTPUT POWER (dBm) 50 6 800 820 840 880 860 f, FREQUENCY (MHz) 900 920 VDD = 28 V IDQ = 200 mA Pout = 60 W (CW) Gp IRL 58 57 56 55 54 , DRAIN EFFICIENCY (%) 16 15 53 52 14 51 50 Figure 7. Power Gain versus Output Power Figure 8. Performance in Narrowband Circuit 120 100 C, CAPACITANCE (pF) 80 60 Coss 40 20 Crss 0 0 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 50 Ciss Figure 9. Capacitance versus Voltage Table 1. Common Source S-Parameters (VDS = 28 V, ID = 2.0 A) f MHz 400 450 500 550 600 650 700 750 800 850 900 S11 |S11| 0.921 0.922 0.924 0.926 0.929 0.932 0.936 0.940 0.945 0.951 0.957 182 181 180 179 178 177 176 176 175 174 173 |S21| 2.23 1.95 1.70 1.49 1.31 1.16 1.03 0.93 0.84 0.78 0.72 S21 52 49 46 42 38 35 31 28 26 24 24 |S12| 0.009 0.009 0.010 0.011 0.013 0.015 0.017 0.019 0.021 0.023 0.025 S12 39 53 64 72 78 81 82 82 82 80 78 |S22| 0.824 0.832 0.841 0.851 0.860 0.870 0.881 0.892 0.904 0.917 0.929 S22 184 184 184 183 183 182 182 181 180 180 179 MRF373 MRF373S 6 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA C19A R3 R6 R7A L5 C2 C1 L6 C3B R4 R2A L3A C18A C3A C4 C5 L4 R1B C18B L3B C16B R2B MRF373S C19B C17B R1A C6 C7 C8 C9 C10 L2 C11 L1B L1A C12 C13 C14B C14A C15 R5T C17A C16A R7B Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB "slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Figure 10. MRF373S Broadband Push-Pull Component Layout MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA MRF373 MRF373S 7 Table 2. MRF373S Broadband Push-Pull Application Parts List Designation C1 C2, C4, C10 C3A, B C5, C6, C9 C7, C8 C11 C12 C13, C18A, B C14A, B C15 C16A, B C17A, B, C19A, B L1A, B, L3A, B, L4, L5 L2, L6 R1A, B R2A, B R3 R4 R5T PCB Balun A, B 10 pF, AVX, P12101J100GBT 120 pF, 300 V, AVX, AQ149M121JAJBE 12 pF, AVX, P12101J120GBT 18 pF, AVX, P12101J180GBT 6.8 pF, AVX, P12101J6R8BBT 4.7 pF, AVX, P12101J4R7BBT 3.3 pF, AVX, P12101J3R3BBT 100 pF, 500 V, AVX, AQ147M101JAJBE 2.7 pF, AVX, P12101J2R7BBT 3.3 mF, 100 V, Vitramon P/N VJ3640Y335KXBAT 22 mF, 35 V, Kemet P/N T491D226K35AS 8.0 nH, Coilcraft P/N A03T 12.5 nH, Coilcraft P/N A04T 22 , Vishay Dale Chip Resistor, 1/4 W (1206) 10 , Vishay Dale Chip Resistor, 1/4 W (1206) 390 , Vishay Dale Chip Resistor (1206) 2.4 k, Vishay Dale Chip Resistor (1206) 470 Thermistor, KOA SPEER MOT P/N 0680149M01 MRF373 PP Printed Circuit Board Rev 2C, Rogers RO4350, Height 30 mils, r = 3.48 Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, r = 10.2 Description 1.0 pF, AVX, P12101J1R0BBT MRF373 MRF373S 8 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA TYPICAL TWO-TONE BROADBAND CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) -10 -15 -20 -25 -30 -35 -40 -45 -50 1 10 100 Pout, OUTPUT POWER (WATTS PEP) 1000 660 MHz 860 MHz 470 MHz VDD = 28 Vdc 15 DFREQUENCY = 6 MHz Gps, POWER GAIN (dB) IDQ = 250 mA per side VDD = 28 Vdc 14 13 12 11 10 9 8 1 DFREQUENCY = 6 MHz IDQ = 250 mA per side 860 MHz 660 MHz 470 MHz 10 100 Pout, OUTPUT POWER (WATTS PEP) 1000 Figure 11. Intermodulation Distortion versus Output Power (MRF373S Broadband Push-Pull Fixture) Figure 12. Broadband Power Gain versus Output Power (MRF373S Broadband Push-Pull Fixture) 50 VDD = 28 Vdc , DRAIN EFFICIENCY (%) D 40 DFREQUENCY = 6 MHz IDQ = 250 mA per side 860 MHz 660 MHz 30 470 MHz 20 10 0 1 10 100 Pout, OUTPUT POWER (WATTS PEP) 1000 Figure 13. Efficiency versus Output Power (MRF373S Broadband Push-Pull Fixture) MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA MRF373 MRF373S 9 NOTES MRF373 MRF373S 10 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA NOTES MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA MRF373 MRF373S 11 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM EDGE OF FLANGE. DIM A B C D E F G H K N Q INCHES MIN MAX 0.790 0.810 0.220 0.240 0.125 0.175 0.205 0.225 0.050 0.070 0.004 0.006 0.562 BSC 0.077 0.087 0.215 0.255 0.350 0.370 0.120 0.140 MILLIMETERS MIN MAX 20.07 20.57 5.59 6.09 3.18 4.45 5.21 5.71 1.27 1.77 0.11 0.15 14.27 BSC 1.96 2.21 5.47 6.47 8.89 9.39 3.05 3.55 G -B- 1 3 2 Q 2 PL 0.25 (0.010) M K D N F TA M B M H E C -T- SEATING PLANE -A- CASE 360B-03 ISSUE D (MRF373) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 1 -B- 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F H K N INCHES MIN MAX 0.370 0.390 0.220 0.240 0.105 0.155 0.205 0.225 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.350 0.370 MILLIMETERS MIN MAX 9.40 9.91 5.59 6.09 2.67 3.94 5.21 5.71 0.89 1.14 0.11 0.15 1.45 1.70 2.16 2.92 8.89 9.39 K D E H N 3 F C -T- SEATING PLANE -A- STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 360C-03 ISSUE B (MRF373S) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. - http://sps.motorola.com/mfax/ 852-26668334 HOME PAGE: http://motorola.com/sps/ JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 MRF373 MRF373S 12 MRF373/D MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA |
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